Zvimiti zvekudziisa zveU-shaped Silicon Carbide (SiC) zvinhu zvekudziisa zvemagetsi zvinoshanda zvakanyanya zvakagadzirirwa maovheni nemaovheni emumaindasitiri anodziya zvakanyanya. Zvinopa simba rakanaka rekudzivirira oxidation, kupisa nekukurumidza, uye hupenyu hurefu. Zvimiti zveU-shaped SiC zvakanakira magadzirirwo ezvitofu zvidiki uko tsvimbo yakatwasuka isingakwane, zvichibvumira kupararira kwekupisa kwakafanana uye kushanda zvakanaka kwekupisa.
Kupisa kwakanyanya kushanda:kusvika 1600°C(nguva pfupi kusvika 1700°C)
Yakanakisa oxidation uye kuramba ngura
Kupisa nekukurumidza uye kusashandisa simba zvakanyanya
Hupenyu hwebasa refu uye kuramba kwakasimba
Dhizaini diki ine chimiro cheU yekudziya yakafanana mumaovheni madiki
Dhayamita inogadziriswa, kureba kwenzvimbo inopisa, uye voltage
Maovheni ekurapa kupisa kwemaindasitiri
Zvitofu zveceramic
Zvitofu zvegirazi
Maovheni ekupisa kwepamusoro-soro murabhoritari
Magadzirirwo echoto chidiki kana chidiki chinoda zvinhu zvakaita seU
| Chinhu | Tsanangudzo |
|---|---|
| Zvinhu | Silicon Carbide (SiC) |
| Kupisa Kushanda Kwakanyanya. | 1600°C (Nguva pfupi 1700°C) |
| Dhayamita | 8 – 54 mm |
| Kureba kwenzvimbo inopisa | 100 - 1800 mm |
| Kureba Kwemagumo Anotonhora | Yakagadzirirwa |
| Chimiro | Tsvimbo yakaita seU |
| Voltage | Yakagadzirirwa |
| MOQ | Zvinokwanisika kutaurirana |
Inopa kugoverwa kwekupisa kwakafanana mumagadzirirwo echoto chidiki
Kushanda zvakanyanya kwekupisa uye mhinduro inokurumidza
Hupenyu hwebasa refu nekudzivirira kwakanaka kwe oxidation
Inogona kugadziriswa yehukuru hwakasiyana hwechoto uye zvinodiwa
Ndapota ipai parameters yenyu yechoto:
Rudzi rwechoto / modhi
Tembiricha yekushanda
Dhayamita yetsvimbo uye kureba kwenzvimbo inopisa
Kudiwa kwemagetsi / simba
Huwandu
Tinokurudzira kuti mushandise chidziyo chekupisa cheSiC chakaita seU chakakodzera kushandisa.
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